This technical article gives you information on the advantages of Silicon Carbide Schottky Diodes over Silicon Rectifiers and how Silicon Rectifiers can compete with SiC Diodes. It also explains why ...

Developed by Power Integrations, the 600-V 12-A diodes feature reverse-recovery charge claimed to be the lowest in the industry. Generally speaking, silicon-carbide (SiC) technology provides superior ...

A group at the University of Montpellier's Institute of Electronics and Systems (IES) has demonstrated mid-IR semiconductor lasers grown expitaxially on an on-axis silicon substrate, said to be the ...

Solar microinverters require high performance diodes to maximize the energy harvested from solar panels while reducing the cost per watt. Silicon Carbide Schottky diodes could provide the needed ...

Using the power of modern computing combined with innovative theoretical tools, an international team of researchers has determined how a one-way electrical valve, or diode, made of only a single ...

A special type of diode made from a crystalline material whose layers are just three atoms thick has been successfully realized for the first time. The superior properties of such ultra-thin crystals ...

Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...

PLANO, Texas--(BUSINESS WIRE)--Diodes Incorporated (Diodes) (Nasdaq: DIOD) today announced the release of its first Silicon Carbide (SiC) Schottky barrier diodes (SBD). The portfolio includes the ...