Silicon carbide (SiC) power devices have been commercially available for ten years. During that time, there has been a steady increase in voltage ratings to 1,200 V and 1,700 V for SiC-Schottky diodes ...

Compared with GTOs and IGCTs, IGBT modules offer the advantage of easier driving due to the MOS-gate and easier cooling due to a fully isolated package. Traction, industrial drive, and pulse power ...