Abstract: The gallium-nitride (GaN) high-electron-mobility transistors (HEMT) devices have great potential for high-power, high-temperature, and high-frequency applications. However, it is challenging ...

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Abstract: In the paper the new outdoor test facility ESTER (Solar Energy TEst and Research) for PV modules of various technologies is presented. The facility has been partially funded by the Regione ...

The module delivers up to 400 W — 200 W per output — within a 2.5-inch footprint. The company says the addition allows engineers to configure as many as 16 isolated outputs from a single supply, ...