Abstract: This paper presents a highly linear 28-GHz band SOI CMOS power amplifier with an adaptive bias circuit for cascode MOSFET for next generation wireless communication. The power amplifier ...

Abstract: This paper presents a 38-GHz 4-stacked FET linear power amplifier in 45-nm CMOS SOI. A novel phase linearizer is proposed to compensate the nonlinearity of the NMOSFET gate-source ...

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