IEEE

Antiferroelectric Negative Capacitance Transistor for Low Power Consumption

Abstract: The huge power consumption in chips puts forward high requirements to steep subthreshold swing (SS), sub-nanometer equivalent oxide thickness (EOT), low ...
IEEE

Physics-Based Nonlinear Capacitance Model Considering Velocity Saturation Effect

Abstract: Accurate modeling of nonlinear capacitance is significant for physics-based compact modeling of GaN high-electric-mobility transistor (HEMT). For conventional methods, physical modeling of ...