Abstract: We present a compendium of two-metal-oxide-semiconductor (MOS)-transistor circuits, which span the range from simple standard configurations to ingenious arrangements. Using these building ...

Abstract: A compact drain current model of amorphous In-Ga-Zn-O thin-film transistors based on terms of surface potential is presented in this letter. An explicit and closed-form scheme for the ...

Department of Chemistry, University of Washington, Seattle, Washington 98195, Department of Chemical Engineering, Stanford University, Stanford, California 94305, and Department of Chemical ...