SSD enthusiasts know all about SLC, MLC, and TLC, but there are some new acronyms in SSD town: V-NAND and CTF. Samsung announced in a press release last night that it has begun mass production of "3D ...

Using just two NAND or inverter gates its possible to build a D type (or ‘toggle’) flip-flop with a push-button input. At power-up the output of gate N2 is at a logical ‘1’, ensuring that transistor T2 ...

Designer and Developer of Non-Volatile Memories, Based on a Break-Through Technology, Expects to Offer Storage-Class Products With 4x the Density & 5-10x the Write Speed of Today’s NAND Flash ...

Toshiba today announced the development of the first 48-layer, three-dimensional flash memory. Based on a vertical stacking technology that Toshiba calls BiCS (Bit Cost Scaling), the new flash memory ...

The part 1 of this two-article series outlined the NAND flash technology and how it transitioned from 2D to 3D NAND flash. The article also explained the current challenges in the way of density ...

Yangtze Memory Technologies Co (YMTC), China’s leading flash memory chipmaker, has published nearly 20 new patents for processes that can boost computing efficiency and optimise chip-stacking ...

The NAND flash technology that Toshiba introduced in 1989, making thumb drives, SSDs and your smartphone’s memory possible, has finally reached a development dead end. Toshiba and other major ...