Abstract: A nanosized-metal-grain pattern-dependent model was proposed for work-function-fluctuation (WKF)-induced variability on the gate-all-around (GAA) silicon ...

School of Microelectronics, Northwestern Polytechnical University, 127 Youyi West Road, Xi’an, Shaanxi 710072, People’s Republic of China ...

Abstract: In this paper, for the first time, the performance of a Ge p-channel FinFET in the presence of random grain-orientation-induced gate-metal work function variability (WFV) is reported. The ...