Abstract: This paper presents a 38-GHz 4-stacked FET linear power amplifier in 45-nm CMOS SOI. A novel phase linearizer is proposed to compensate the nonlinearity of the NMOSFET gate-source ...
Abstract: The realization of a highly efficient linearized amplifier has emerged as a paramount issue in the design of advanced mobile handsets. In this paper, a new RF amplifier linearization scheme ...
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