This technical article gives you information on the advantages of Silicon Carbide Schottky Diodes over Silicon Rectifiers and how Silicon Rectifiers can compete with SiC Diodes. It also explains why ...
Solar microinverters require high performance diodes to maximize the energy harvested from solar panels while reducing the cost per watt. Silicon Carbide Schottky diodes could provide the needed ...
A group at the University of Montpellier's Institute of Electronics and Systems (IES) has demonstrated mid-IR semiconductor lasers grown expitaxially on an on-axis silicon substrate, said to be the ...
MALVERN, Pa., July 09, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced three new Gen 3 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the compact, low ...
Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...
A special type of diode made from a crystalline material whose layers are just three atoms thick has been successfully realized for the first time. The superior properties of such ultra-thin crystals ...
Gallium nitride (GaN) is fast becoming a foundational technology in power electronics, offering higher power density and better efficiency than traditional silicon. By bringing faster switching speeds ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback