Abstract: Assessing short channel effects (SCEs) is crucial in the high-frequency optimization of downscaled field-effect transistors (FETs) such as GaN high electron mobility transistors (HEMTs).

Abstract: In this paper, the reverse drain-induced barrier lowering (RDIBL) in the negative capacitance field-effect transistor (NCFET) is discussed. It is found that ...

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Hello, health enthusiasts! My name is Kaitlin Reilly, and I’m here to deliver the internet’s best wellness tips of the week. Are you a fan of early bird specials? More and more Americans are, Yahoo’s ...